List of records in nano database
||Biró,L.,P.;Gyulai,J.;Havancsák ,K.;Didyk ,A.,Yu.;Bogen,S;Frey,L.;Ryssel,H.
||NEW METHOD BASED ON ATOMIC FORCE MICROSCOPY FOR IN-DEPTH CHARACTERIZATION OF DAMAGE IN Si IRRADIATED WITH 209 MeV Kr
||Nucl. Instr. Meth. B
||Swift heavy ions;damage distribution;in depth characterization;tapping mode AFM;Si;209 MeV Kr;TOP_Ion;YEAR_Before1998;W_Experiment;W_AFM;W_Silicon
||This paper reports on the application of a new irradiation geometry in combination with a TM-AFM for the in depth characterization of damage produced by 209 MeV Kr ions in Si.
||Si was irradiated with 209 MeV Kr ions on an
(010) oriented surface. Then atomic force
microscopy (AFM) was used to measure the
roughness on the adjacent (100) plane (the
original wafer surface). The distance on this
later plane is called "depth" as measured from
the (010)/(100) edge. Good agreement is found in
projected range values between AFM, spreading
resistance (SR) data, and Monte Carlo (TRIM)
simulation. Four distinct damage zones are found:
zone A, dominated by electronic stopping effects;
zone B, electronically assisted elastic
collisions; zone C, dominant nuclear stopping;
and zone D, defects created by the channeled
fraction of the beam.
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