List of records in nano database
||USE OF ATOMIC-FORCE MICROSCOPY AND OF A PARALLEL IRRADIATION GEOMETRY FOR IN-DEPTH CHARACTERIZATION OF DAMAGE PRODUCED BY SWIFT Kr IONS IN SILICON
||Phys. Rev. B
||AFM;swift heavy ions;damage;depth distribution;electronic stopping;nuclear stopping;tapping mode;irradiation geometry;TOP_Ion;YEAR_Before1998;W_Experiment;W_AFM;W_Silicon
||This work describes a new irradiation geometry which allows the characterization of damage produced by the slowing down particles throughout the entire penetration range.
||Silicon samples were irradiated with 209 MeV Kr
ions in a direction parallel with the (100)
plane. The variation vs distance from the
irradiated edge, the (010) plane, i.e., vs depth,
of the defects produced by the irradiation was
evaluated without any sample preparation by
atomic-force microscopy (AFM) and spreading
resistance measurement on the (100) plane.
Both methods indicate a penetration depth of
28 µm, in good agreement with the value given by
Monte Carlo (TRIM) range calculation.
AFM measurements allowed distinction between four
depth zones to which different damage production
mechanisms can be ascribed.
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