List of records in nano database
IDs:
53
| Authors : |
Biró,L.,P.;Gyulai,J.;Khanh,N.,Q. |
| Title : |
INFLUENCE OF SAMPLE THICKNESS ON CARRIER LIFETIME MODIFICATON INDUCED BY 4 MeV PROTON IMPLANTATION IN SILICON |
| JournalName : |
Nucl. Instr. Meth. B |
| PubDateYear : |
1996 |
| PubDateOther : |
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| Volume : |
112 |
| Issue : |
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| StartPage : |
173 |
| EndPage : |
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| Keywords : |
lifetime engineering;ion irradiation;Si;damage distribution;microwave absorbtion;TOP_Misc;YEAR_Before1998;W_Experiment;W_PAI |
| Notes : |
This paper describes the dependence of the lifetime values measured by microwave absorbtion on photogenerated carriers in Si damaged by 4 MeV protons. |
| Abstract : |
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