List of records in nano database



Authors : Woo,Y.,S.;Osváth,Z.;Vértesy,G.;Bíró,L.,P.;Roth,S.
Title : Effect of Ar+ irradiation on the behaviour of carbon nanotube transistor
JournalName : Physica Status Solidi B
PubDateYear : 2006
PubDateOther :
Volume : 243
Issue :
StartPage : 3390
EndPage : 3393
Keywords :
Notes :
Abstract : The characteristics of carbon nanotube field effect transistor are investigated after the whole device is irradiated with Ar+ ions. The resistance become much higher due to the electron scattering at vacancies produced by Ar+ irradiation. In addition, the subthreshold slop, S, (dV G /d(log I D)) increases and the Schottky barrier height decreases after the irradiation, which imply the interface states generated within the band gap of the semiconducting single walled carbon nanotube. Therefore, we suggest a way that makes a transparent contact for electron transport by manipulating the vacancy formation at the interface between nanotube and metal leads.
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