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||Electrical Characterization of Tungsten
Nanowires Deposited by Focused Ion Beam (FIB)
||The deposition of nanowires for interconnects in nanoelectronic devices were
studied morphologically by scanning electron microscopy (SEM), atomic force
microscopy (AFM) and by in-situ resistance measurements. The deposition and basic
characterization of nanometer size tungsten wires by gas injection (GIS) and focused ion
beams (FIB) was carried out in-situ in a LEO 1540 XB workstation. The I(V)
measurement showed that the deposited W wires have ohmic characteristic. The
variation of the resistance during an ex-situ heating was linear with a low thermal
coefficient (4% of the pure metallic W).
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