List of records in nano database



Authors : Petrik,P.;Lohner,T.;Fried,M.;Biró,L.,P.;Khanh,N.,Q.;Gyulai,J.;Lehnert,C.;Schneider,C.;Ryssel,H.
Title : Elipsometric study of polycrystalline silicon films prepared by low pressure chemical vapor deposition
JournalName : J. Appl. Phys.
PubDateYear : 2000
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Volume : 87
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StartPage : 1734
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Abstract : Polysilicon layers with thicknesses between 8 and 600 nm deposited by low-pressure chemicalvapor deposition at temperatures ranging from 560 to 640 °C were characterized by spectroscopicellipsometry ~SE! to determine the layer thicknesses and compositions using multilayer opticalmodels and the Bruggeman effective-medium approximation. The dependence of the structuralparameters on the layer thickness and deposition temperature have been investigated. A bettercharacterization of the polysilicon layer is achieved by using the reference data of fine-grainedpolysilicon in the optical model. The amount of voids in the polysilicon layer was independentlymeasured by Rutherford backscattering spectrometry ~RBS!. The SE and RBS results show a goodcorrelation. The comparison of the surface roughness measured by SE and atomic force microscopy~AFM! shows that independently of the AFM window sizes, a good correlation of the roughnessdetermined by SE and AFM was obtained.
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