IDs:

66

Authors : Khanh,N.,Q.;Tüttô,P.;Jároli,E.,N.;Buiu,O.;Biró,L.,P.;Pászti,F.;Mohácsi,T.;Kovacsics,Cs.;Manuaba,A.;Gyulai,J.
Title : CHARGE CARRIRER LIFETIME MODIFICATION IN SILICON BY HIGH ENERGY H+, He+ ION IMPLANTATION
JournalName : Materials Sci. Forum
PubDateYear : 1997
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Volume : 248-249
Issue :
StartPage : 101
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Keywords : lifetime engineering;Si;ion irradiation;damage;microwave absorbtion;photogenerated carriers
Notes : The paper reports on the use of the microwave photoconductive decay method for monitoring lifetime modifications induced by ion irradiation in Si.
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