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IDs:
61
Authors :
Khanh,N.,Q.;Tüttô,P.;Jároli,E.,N.;Buiu,O.;Biró,L.,P.;Pászti,F.;Mohácsy,T.;Kovacsics,Cs.;Manuaba,A.;Gyulai,J.
Title :
CHARGE CARRIER LIFETIME MODIFICATION IN SILICON BY HIGH ENERGY H+, He+ ION IMPLANTATION
JournalName :
Nucl. Instr. Meth. B
PubDateYear :
1997
PubDateOther :
Volume :
127/128
Issue :
StartPage :
388
EndPage :
Keywords :
lifetime engineering;ion irradiation;damage;three layers;microwave absorbtion;photogenerated carriers
Notes :
The paper reports a three layer modell which describes satisfactorily the depenedence of the lifetime values measured by micro-PCD method on the overlap of the damaged region with the pocket of photoexcited carriers created.
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