IDs:

59

Authors : Biró,L.,P.;Gyulai,J.;Havancsák ,K.;Didyk ,A.,Yu.;Bogen,S;Frey,L.;Ryssel,H.
Title : NEW METHOD BASED ON ATOMIC FORCE MICROSCOPY FOR IN-DEPTH CHARACTERIZATION OF DAMAGE IN Si IRRADIATED WITH 209 MeV Kr
JournalName : Nucl. Instr. Meth. B
PubDateYear : 1997
PubDateOther :
Volume : 122
Issue : 3
StartPage : 559
EndPage : 562
Keywords : Swift heavy ions;damage distribution;in depth characterization;tapping mode AFM;Si;209 MeV Kr;TOP_Ion;YEAR_Before1998;W_Experiment;W_AFM;W_Silicon
Notes : This paper reports on the application of a new irradiation geometry in combination with a TM-AFM for the in depth characterization of damage produced by 209 MeV Kr ions in Si.
Abstract : Si was irradiated with 209 MeV Kr ions on an (010) oriented surface. Then atomic force microscopy (AFM) was used to measure the roughness on the adjacent (100) plane (the original wafer surface). The distance on this later plane is called "depth" as measured from the (010)/(100) edge. Good agreement is found in projected range values between AFM, spreading resistance (SR) data, and Monte Carlo (TRIM) simulation. Four distinct damage zones are found: zone A, dominated by electronic stopping effects; zone B, electronically assisted elastic collisions; zone C, dominant nuclear stopping; and zone D, defects created by the channeled fraction of the beam.
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