IDs:

56

Authors : Cacciato,A.;Klappe,J.,G.,E.;Cowerbn,N.,E.,B.;Wanderwost,W.;Biró,L.,P.;Custer,J.,S.;Saris,F.
Title : DISLOCATION FORMATION AND B TRANSIENT DIFFUSION IN C COIMPLANTED Si
JournalName : J. Appl. Phys.
PubDateYear : 1996
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Volume : 79
Issue :
StartPage : 2314
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Keywords : B implantation;transient enhanced diffusion;dislocation;C co-implantation;self interstitial trapping;TOP_Misc;YEAR_Before1998;W_Experiment;W_PAI
Notes : The paper reports results on reduction of the transient enhanced diffusion by trapping Si self interstitial by C atoms.
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