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49


Authors : Biró,L.,P.;Gyulai,J.;Bogen,S.;Frey,L.;Ryssel,H.
Title : INVESTIGATION OF THE EFFECT OF ALTERED DEFECT STRUCTURE PRODUCED BY PHOTON ASSISTED IMPLANTATION ON THE DIFFUSION OF As IN Si DURING THERMAL ANNEALING
JournalName : Nucl. Instr. Meth. B
PubDateYear : 1994
PubDateOther :
Volume : 85
Issue :
StartPage : 925
EndPage :
Keywords : photon assisted implantation;altered defect structure;annealing;diffusion;electrical activation;As;TOP_Misc;YEAR_Before1998;W_Experiment;W_PAI
Notes : This work investigates the effects of photon assisted implantation on the defect structure produced during As implantation into Si and the modifications produced by the altered defect structure in the diffusive processes and in the electrical activation taking place during thermal annealing.
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