Si;ion implantation;point defects;illumination during implantation;defect engineering;modified defect distribution;TOP_Misc;YEAR_Before1998;W_Experiment;W_PAI
Notes :
This work describes the use of simultaneous light irradiation during ion implantation used to achieve the in-situ, real-time defect engineering. The motion of the point defects produced by the slowing down particles is influenced by the electric field induced in the surface region by the light irradiation.
