List of records in nano database
IDs:
399
| Authors : |
Woo,Y.,S.;Osváth,Z.;Vértesy,G.;Bíró,L.,P.;Roth,S. |
| Title : |
Effect of Ar+ irradiation on the behaviour
of carbon nanotube transistor |
| JournalName : |
Physica Status Solidi B |
| PubDateYear : |
2006 |
| PubDateOther : |
|
| Volume : |
243 |
| Issue : |
|
| StartPage : |
3390 |
| EndPage : |
3393 |
| Keywords : |
|
| Notes : |
|
| Abstract : |
The characteristics of carbon nanotube field effect transistor are investigated after the whole device is irradiated
with Ar+ ions. The resistance become much higher due to the electron scattering at vacancies
produced by Ar+ irradiation. In addition, the subthreshold slop, S, (dV
G /d(log I
D)) increases and the
Schottky barrier height decreases after the irradiation, which imply the interface states generated within
the band gap of the semiconducting single walled carbon nanotube. Therefore, we suggest a way that
makes a transparent contact for electron transport by manipulating the vacancy formation at the interface
between nanotube and metal leads. |
| HTML_Local : |
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| HTML_Remote : |
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| Preprint_Local : |
http://www.nanotechnology.hu/reprint/PhysStatSolB_243_3390_transistor.pdf |
| Preprint_Remote : |
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