List of records in nano database
IDs:
395
Authors : |
Barna,Á.;Kotis,L.;Lábár,J.,L.;Osváth,Z.;Tóth,A.,L.;Menyhárd,M.;Zalar,A.;Panjan,P. |
Title : |
Ion beam mixing by focused ion beam |
JournalName : |
Journal of Applied Physics |
PubDateYear : |
2007 |
PubDateOther : |
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Volume : |
102 |
Issue : |
|
StartPage : |
1 |
EndPage : |
7 |
Keywords : |
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Notes : |
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Abstract : |
Si amorphous 41 nm/Cr polycrystalline 46 nm multilayer structure was irradiated by 30 keV Ga+
ions with fluences in the range of 25−820 ions/nm2 using a focused ion beam. The effect of
irradiation on the concentration distribution was studied by Auger electron spectroscopy depth
profiling, cross-sectional transmission electron microscopy, and atomic force microscopy. The ion
irradiation did not result in roughening on the free surface. On the other hand, the Ga+ irradiation
produced a strongly mixed region around the first Si/Cr interface. The thickness of mixed region
depends on the Ga+ fluence and it is joined to the pure Cr matrix with an unusual sharp interface.
With increasing fluence the width of the mixed region increases but the interface between the mixed
layer and pure Cr remains sharp. TRIDYN simulation failed to reproduce this behavior. Assuming
that the Ga+ irradiation induces asymmetric mixing, that is during the mixing process the Cr can
enter the Si layer, but the Si cannot enter the Cr layer, the experimental findings can qualitatively be
explained. |
HTML_Local : |
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HTML_Remote : |
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Preprint_Local : |
http://www.nanotechnology.hu/reprint/JApplPhys_102_053513_mixing.pdf |
Preprint_Remote : |
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