Selective Nucleation and Growth of
Carbon Nanotubes at the CoSi2/Si Interface
JournalName :
Appl.Phys.Lett.
PubDateYear :
2000
PubDateOther :
Feb.7.
Volume :
76
Issue :
6
StartPage :
706
EndPage :
708
Keywords :
Notes :
Abstract :
A patterned CoSi2/Si substrate was used for the catalytic growth of carbon nanostructures and
nanotubes in the temperature range of 750�800 °C, using acetylene/N2 as a reaction mixture
flowing through a quartz tube at ambient pressure. Selective nucleation confined to the
CoSi2/Si interface region was achieved. Scanning electron microscopy and transmission
electron microscopy were used to investigate the grown nanostructures.
